Thick tungsten hardmask films deposition on high compressive/tensile bow wafers

A method of forming a hardmask layer on a substrate comprising:

• applying a chucking voltage to a substrate positioned on an electrostatic chuck in a processing chamber;
• forming a seed layer comprising boron on a film stack disposed on the substrate by:
• supplying a seed layer gas mixture in the processing chamber while maintaining the chucking voltage, wherein the seed layer gas mixture comprises at least a boron-based precursor gas and a nitrogen-based precursor gas;
• and
• steadily supplying the nitrogen-based precursor gas and varying a flow of the boron-based precursor gas in the processing chamber to form the seed layer;
• forming a transition layer comprising boron and tungsten on the seed layer by supplying a transition layer gas mixture in the processing chamber, wherein supplying the transition layer gas mixture comprises:
• ramping down a gas flow rate of the boron-based precursor gas while maintaining a steady gas flow rate of the nitrogen-based precursor gas;
• and
• supplying a tungsten-based precursor gas;
• and
• forming a bulk hardmask layer on the transition layer by supplying a main deposition gas mixture in the processing chamber.

A method of forming a hardmask layer on a substrate comprising:

• applying a chucking voltage to a substrate positioned on an electrostatic chuck in a processing chamber;
• forming a boron nitride layer on a film stack disposed on the substrate by supplying a seed layer gas mixture in the processing chamber while maintaining the chucking voltage, wherein the seed layer gas mixture comprises at least a boron-based precursor gas and a nitrogen-based precursor gas;
• forming a boron tungsten nitride layer on the boron nitride layer by supplying a transition layer gas mixture in the processing chamber, wherein supplying the transition layer gas mixture comprises:
• ramping down a gas flow rate of the boron-based precursor gas while maintaining a steady gas flow rate of the nitrogen-based precursor gas;
• and
• supplying a tungsten-based precursor gas;
• and
• forming a tungsten nitride layer on the boron nitride layer by supplying a main deposition gas mixture in the processing chamber.