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US 10,504,725 B2Granted
Material selective regrowth structure and method
AssigneeTexas State University—San Marcos
InventorEdwin L. Piner
Life of this patent
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Abstract
The disclosure relates to a method for creating a nanoscale structure. The method includes forming a window in a semiconductor structure, the semiconductor structure comprising a substrate, a first semiconductor layer, and a mask layer; depositing a second semiconductor layer within the window such that a gap remains between the second semiconductor and a portion of the window; and regrowing the first semiconductor layer such that the first semiconductor layer fills the gap.
Claims11
A nanoscale structure comprising:
- a substrate;
- a first semiconductor layer on top of the substrate;
- and
- a second semiconductor layer deposited within a window formed in the substrate and the first semiconductor layer such that a gap exists between the second semiconductor and a portion of the first semiconductor layer/and or the substrate, wherein the gap is filled by a regrown first semiconductor layer.
1 more element
Dependencies are inferred from the claim text.