Selective film growth for bottom-up gap filling
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Lien Huang, De-Wei Yu
Life of this patent
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Abstract
A method includes etching a portion of a semiconductor material between isolation regions to form a trench, forming a semiconductor seed layer extending on a bottom surface and sidewalls of the trench, etching-back the first semiconductor seed layer until a top surface of the semiconductor seed layer is lower than top surfaces of the isolation regions, performing a selective epitaxy to grow a semiconductor region from the semiconductor seed layer, and forming an additional semiconductor region over the semiconductor region to fill the trench.
Claims20
An integrated circuit device comprising:
- a semiconductor substrate;
- isolation regions adjacent to a surface of the semiconductor substrate;
- a first semiconductor seed layer between isolation regions, the first semiconductor seed layer comprising:
- a first portion on a top surface of a portion of the semiconductor substrate;
- and
- a second portion and a third portion on sidewalls of the isolation regions and connecting to the first portion, wherein top surfaces of the second portion and the third portion are lower than top surfaces of the isolation regions;
- and
- a first semiconductor region between the second portion and the third portion of the first semiconductor seed layer, wherein the first semiconductor seed layer and the first semiconductor region have different compositions.
An integrated circuit device comprising:
- a semiconductor substrate;
- isolation regions extending into the semiconductor substrate;
- and
- a plurality of semiconductor regions between the isolation regions, with an upper one of the plurality of semiconductor regions being overlapping a respective lower one of the plurality of semiconductor regions, wherein each of the plurality of semiconductor regions comprises:
- a seed layer;
- and
- an epitaxy semiconductor region over a bottom portion of the seed layer, wherein the seed layer and the epitaxy semiconductor region are formed of different semiconductor materials.
An integrated circuit device comprising:
- a semiconductor substrate;
- isolation regions extending into the semiconductor substrate;
- and
- a semiconductor region between opposite portions of the isolation regions, the semiconductor region comprising:
- a seed layer comprising:
- a bottom portion;
- and
- sidewall portions contacting sidewalls of the isolation regions, wherein the bottom portion and the sidewall portions form a basin;
- and
- an epitaxy semiconductor region in the basin, wherein the epitaxy semiconductor region and the seed layer are formed of different semiconductor materials.
Dependencies are inferred from the claim text.