Method and apparatus for selective epitaxy

A method of forming a film on a substrate, the method comprising:

• precleaning a substrate, wherein a surface of the substrate comprises silicon surfaces and dielectric surfaces;
• applying an inhibitor species to the surface of the substrate in a first processing chamber such that the inhibitor species preferentially attaches to the dielectric surfaces of the surface of the substrate;
• exposing the substrate having the inhibitor species on the dielectric surfaces thereof to a precursor for epitaxial deposition of a silicon- or germanium- containing layer in a second processing chamber, different than the first processing chamber, while maintaining the substrate at a first temperature of less than about 600 degrees Celsius;
• and
• removing the inhibitor species from the dielectric surfaces with an oxidation process in a third processing chamber, different than the second processing chamber, while maintaining the substrate at a second temperature that is lower than the first temperature.