Back to results
US 10,504,720 B2Granted
Etching using chamber with top plate formed of non-oxygen containing material
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsEn-Ping Lin, Yi-Wei Chiu, Tzu-Chan Weng, Wen-Zhong Ho
Life of this patent
Estimating the term…
Abstract
A method includes etching a first oxide layer in a wafer. The etching is performed in an etcher having a top plate overlapping the wafer, and the top plate is formed of a non-oxygen-containing material. The method further includes etching a nitride layer underlying the first oxide layer in the etcher until a top surface of a second oxide layer underlying the nitride layer is exposed. The wafer is then removed from the etcher, with the top surface of the second oxide layer exposed when the wafer is removed.
Claims20
A method comprising:
- etching a first nitride layer in a wafer to form a patterned first nitride layer, wherein a first oxide layer underlying the first nitride layer is exposed;
- etching the first oxide layer using the patterned first nitride layer as an etching mask, wherein the etching is performed in a first etcher comprising a first top plate overlapping the wafer, and the first top plate is formed of a non-oxygen-containing material;
- etching a second nitride layer underlying the first oxide layer in the first etcher until a top surface of a second oxide layer underlying the second nitride layer is exposed, wherein patterns of the patterned first nitride layer is transferred into the second nitride layer;
- removing the wafer from the first etcher, with the top surface of the second oxide layer exposed when the wafer is removed;
- removing the first top plate out of the first etcher;
- removing a surface oxide layer on the first top plate to expose the non-oxygen-containing material;
- and
- re-installing the first top plate into the first etcher.
5 more elements
A method comprising:
- placing a wafer into an etching chamber, wherein the etching chamber comprises a top plate overlapping the wafer, and the top plate comprises:
- an inner portion formed of an oxygen-containing material;
- and
- an outer portion formed of a non-oxide material, wherein the outer portion is coated on the inner portion;
- etching a oxide layer of the wafer in the etching chamber to expose a first nitride layer underlying the oxide layer;
- etching the first nitride layer in the etching chamber to expose a second oxide layer, wherein in the etching of the oxide layer and the first nitride layer, the top plate is exposed to plasma generated from respective etchant gases;
- and
- etching an additional oxide layer generated on the top plate, wherein after the etching, the additional oxide layer is removed, and the outer portion of the top plate is left unremoved.
5 more elements
A method comprising:
- placing a wafer into an etching chamber of a first etcher, wherein a first top plate, a first outer cell, and a first protection ring of the first etcher are formed of a non-oxygen-containing material;
- etching a first silicon oxide layer in the wafer using an etchant gas, wherein in the etching the first silicon oxide layer, oxygen (O2) is conducted as a part of a corresponding etchant gas;
- etching a nitride layer underlying the first silicon oxide layer in the etching chamber of the first etcher until a top surface of a second oxide layer underlying the nitride layer is exposed;
- etching the second oxide layer in a second etcher, wherein a second top plate, a second outer cell, and a second protection ring in the second etcher are formed of an oxygen-containing material;
- taking the first top plate, the first outer cell, and the first protection ring out of the etching chamber;
- removing silicon oxide layers generated on surfaces of the first top plate, the first outer cell, and the first protection ring to expose silicon;
- and
- re-installing the first top plate, the first outer cell, and the first protection ring into the etching chamber.
5 more elements
Dependencies are inferred from the claim text.