Method for manufacturing semiconductor device and manufacturing method of the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYung-Lung Lin, Hau-Yi Hsiao, Chih-Hui Huang, Kuo-Hwa Tzeng, Cheng-Hsien Chou
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Abstract
The present disclosure provides a method for wafer bonding, including providing a wafer, forming a sacrificial layer on a top surface of the first wafer, trimming an edge of the first wafer to obtain a first wafer area, cleaning the top surface of the first wafer, removing the sacrificial layer, and bonding the top surface of the first wafer to a second wafer having a second wafer area greater than the first wafer area.
Claims20
A method for wafer bonding, comprising:
- providing a first wafer;
- forming a sacrificial layer on a top surface of the first wafer;
- trimming an edge of the first wafer to obtain a first wafer area;
- cleaning the top surface of the first wafer;
- removing the sacrificial layer;
- bonding the top surface of the first wafer to a second wafer having a second wafer area greater than the first wafer area;
- and
- thinning the first wafer from a bottom surface opposite to the top surface after trimming the edge of the first wafer, until a trimmed edge is reached.
A method for wafer bonding, comprising:
- providing a first wafer having a first bonding surface;
- edge-trimming the first wafer at the first bonding surface;
- cleaning the first bonding surface;
- and
- performing chemical mechanical polishing (CMP) on the first bonding surface.
A method for forming an edge-trimmed wafer, comprising:
- providing a wafer having a first surface;
- edge-trimming the wafer at the first surface by reducing a diameter of the wafer in a range of from about 2 mm to about 6 mm and reducing a thickness of the wafer in a range of from about 0.01 μm to about 200 μm;
- cleaning the first surface by a basic and an acidic etch;
- and
- performing a chemical mechanical polishing (CMP) on the first surface after cleaning the first surface.
Dependencies are inferred from the claim text.