Connecting memory cells to a data line sequentially while applying a read voltage to the memory cells and programming the read data to a single memory cell

A programming method, comprising:

• for each memory cell of a plurality of memory cells commonly electrically connected to a first access line, with each memory cell of the plurality of memory cells corresponding to respective data, programming the respective data for that memory cell in that memory cell;
• for a first memory cell of the plurality of memory cells, reading the respective data from that memory cell by applying a read voltage to the first access line while the first memory cell is electrically connected to a data line and while each remaining memory cell of the plurality of memory cells is electrically disconnected from the data line;
• for each remaining memory cell of the plurality of memory cells, reading the respective data from that memory cell by electrically disconnecting a prior read memory cell of the plurality of memory cells from the data line and electrically connecting that memory cell to the data line while the read voltage remains applied to the first access line;
• and
• after reading the respective data from each memory cell of the plurality of memory cells, programming the read respective data from each memory cell of the plurality of memory cells in a single memory cell electrically connected to a second access line.

A programming method, comprising:

• programming first data in a first memory cell operating in a single-bit-per-memory-cell mode of operation and programming second data in a second memory cell operating in the single-bit-per-memory-cell mode of operation, wherein the first and second memory cells are commonly electrically connected to a first access line;
• reading the first data from the first memory cell by applying a read voltage to the first access line while the first memory cell is electrically connected to the data line and while the second memory cell is electrically disconnected from the data line;
• reading the second data from the second memory cell by electrically disconnecting the first memory cell from the data line and electrically connecting the second memory cell to the data line while the read voltage remains applied to the first access line;
• and
• programming the read first data and the read second data in a single memory cell electrically connected to a second access line operating in a multiple-bit-per-memory-cell mode of operation.