Multi-level versatile memory
AssigneeAlacrity Semiconductors, Inc.
InventorJames Lin
Life of this patent
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Abstract
MLVM is a DRAM product that has the flexibility for certain performance characteristics to change based on programming characteristics made when writing the data and the ability to write multiple bits of data at the same time. At the simplest level, this means that depending on the type of operation(s) being executed, certain more favorable characteristics can be programmed into the DRAM to get benefits over the current state of the art. The most likely benefits would be in power utilization and heat.
Claims22
A method for programming a ferroelectric memory to store data sourced from a computational operation executed by a processor, the method comprising:
- receiving, using a controller, a multi-bit data value from the processor, to be stored in a ferroelectric transistor memory having a transistor gate comprising a ferroelectric material that controls flow of current through the ferroelectric transistor memory;
- determining, using the controller, at least one signal characteristic for a signal to be used to store the multi-bit data value in the ferroelectric transistor memory, wherein the at least one signal characteristic is determined based on a type of the computational operation executed by the processor and is not determined based on a result of the computational operation;
- and
- executing a write operation, the write operation comprising applying, using the controller, the signal having the at least one determined signal characteristic to the ferroelectric transistor memory to store a value representing the multi-bit data value.
A system for programming a ferroelectric memory to store data sourced from a computational operation executed by a processor, the system comprising:
- a ferroelectric transistor memory having a transistor gate comprising a ferroelectric material that controls flow of current through the ferroelectric transistor memory;
- and
- a controller configured to:
- receive a multi-bit data value from the processor and to write the multi-bit data value to the ferroelectric transistor memory, wherein the controller determines at least one signal characteristic for a signal to be used to write the multi-bit data value to the ferroelectric transistor memory, wherein the at least one signal characteristic is selected based on a type of the computational operation executed by the processor and is not determined based on a result of the computational operation;
- and
- execute a write operation, the write operation comprising applying the signal having the at least one determined signal characteristic to the ferroelectric transistor memory to store a value representing the multi-bit data value.
Dependencies are inferred from the claim text.