Current separation for memory sensing

An apparatus comprising:

• a memory cell having a ferroelectric material;
• and
• circuitry configured to:
• apply a sensing voltage to the memory cell;
• and
• determine a data state of the memory cell by separating a current output by the memory cell while the sensing voltage is being applied to the memory cell before a particular reference time and a current output by the memory cell while the sensing voltage is being applied to the memory cell after the particular reference time, wherein the particular reference time is based on a time at which a change of a polarization state of the ferroelectric material of the memory cell occurs.

A method of operating memory, comprising:

• applying a sensing voltage to a memory cell having a ferroelectric material;
• separating a first current output by the memory cell while the sensing voltage is being applied to the memory cell and a second current output by the memory cell while the sensing voltage is being applied to the memory cell, wherein:
• the first current corresponds to a first polarization state of the ferroelectric material of the memory cell;
• and
• the second current corresponds a second polarization state of the ferroelectric material of the memory cell wherein the first polarization state is different from the second polarization state;
• and
• determining a data state of the memory cell using only the second current output by the memory cell.

An apparatus comprising:

• a memory cell having a ferroelectric material;
• and
• circuitry configured to:
• apply a sensing voltage to the memory cell;
• separate a current output by the memory cell while the sensing voltage is being applied to the memory cell before a particular reference time and a current output by the memory cell while the sensing voltage is being applied to the memory cell after the particular reference time, wherein the particular reference time is based on a time at which a change of a polarization state of the ferroelectric material of the memory cell occurs;
• and
• determine a data state of the memory cell using only the current output by the memory cell while the sensing voltage is being applied to the memory cell after the particular reference time.

A method of operating memory, comprising:

• applying a sensing voltage to a memory cell having a ferroelectric material;
• pre-charging a data line to which the memory cell is coupled before applying the sensing voltage to the memory cell;
• continuing to pre-charge the data line to which the memory cell is coupled while the sensing voltage is being applied to the memory cell until a particular reference time, wherein the particular reference time is based on a time at which a change of a polarization state of the ferroelectric material of the memory cell occurs;
• and
• determining a data state of the memory cell by separating a current output by the memory cell while the sensing voltage is being applied to the memory cell before the particular reference time and a current output by the memory cell while the sensing voltage is being applied to the memory cell after the particular reference time.

An apparatus, comprising:

• a memory cell having a ferroelectric material;
• and
• circuitry configured to:
• apply a sensing voltage to the memory cell;
• pre-charge a data line to which the memory cell is coupled before applying the sensing voltage to the memory cell;
• continue to pre-charge the data line to which the memory cell is coupled while the sensing voltage is being applied to the memory cell until a particular reference time;
• separate a current output by the memory cell while the sensing voltage is being applied to the memory cell before the particular reference time and a current output by the memory cell while the sensing voltage is being applied to the memory cell after the particular reference time;
• and
• determine a data state of the memory cell using only the current output by the memory cell while the sensing voltage is being applied to the memory cell after the particular reference time.

A method of operating memory, comprising:

• applying a sensing voltage to a memory cell having a ferroelectric material;
• and
• determining a data state of the memory cell by:
• separating a first current output by the memory cell while the sensing voltage is being applied to the memory cell and a second current output by the memory cell while the sensing voltage is being applied to the memory cell, including separating charge discharged by the memory cell corresponding to the first current output by the memory cell and charge discharged by the memory cell corresponding to the second current output by the memory cell, wherein:
• the first current output by the memory cell corresponds to a first polarization state of the ferroelectric material of the memory cell;
• the second current output by the memory cell corresponds a second polarization state of the ferroelectric material of the memory cell wherein the first polarization state is different from the second polarization state;
• and
• using only the charge discharged by the memory cell corresponding to the second current output by the memory cell.

An apparatus comprising:

• a memory cell having a ferroelectric material;
• and
• circuitry configured to:
• apply a sensing voltage to the memory cell;
• and
• determine a data state of the memory cell by separating a first current output by the memory cell while the sensing voltage is being applied to the memory cell before a particular reference time and a second current output by the memory cell while the sensing voltage is being applied to the memory cell after the particular reference time;
• wherein:
• the circuitry includes a capacitor coupled to the memory cell and configured to store only charge discharged by the memory cell corresponding to the second current output by the memory cell while the sensing voltage is being applied to the memory cell;
• and
• the circuitry is configured to determine the data state of the memory cell based on the charge stored by the capacitor.