Magnetic memory device

A magnetic memory device, comprising:

• a metal-containing layer comprising a metallic element, the metal-containing layer comprising a first portion, a second portion, and a third portion provided between the first portion and the second portion;
• a first magnetic layer;
• a second magnetic layer provided between the first magnetic layer and the third portion, a direction from the second magnetic layer toward the first magnetic layer being along a first direction;
• a first intermediate layer comprising a portion provided between the first magnetic layer and the second magnetic layer, the first intermediate layer being nonmagnetic;
• a first insulating region, a direction from the first portion toward the first insulating region being along the first direction;
• a second insulating region, a direction from the second portion toward the second insulating region being along the first direction, the first intermediate layer being provided between the first insulating region and the second insulating region in a second direction crossing the first direction;
• a third insulating region;
• a fourth insulating region, the first intermediate layer being provided between the third insulating region and the fourth insulating region in a third direction crossing a plane comprising the first direction and the second direction,
• a thickness of the first insulating region in the second direction being different from the third insulating region in the third direction.