Memory management method, memory control circuit unit and memory storage device

A memory control circuit unit, configured to control a rewritable non-volatile memory module, and the memory control circuit unit comprising:

• a host interface, configured to couple to a host system;
• a memory interface, configured to couple to the rewritable non-volatile memory module comprising a plurality of physical units;
• and
• a flash memory management circuit, coupled to the host interface and the memory interface,
• wherein the flash memory management circuit is configured to select at least one logical unit meeting a first condition, wherein the at least one logical unit meeting the first condition is mapped to at least one third physical unit among the physical units, and each memory cell of the at least one third physical unit is configured to store a first number of bit data and programmed based on a first operating mode,
• wherein the flash memory management circuit is further configured to determine a reference count according to a number of the selected logical unit, wherein the reference count reflects a logical data volume corresponding to the selected logical unit,
• wherein the flash memory management circuit is further configured to receive a first write command,
• wherein the flash memory management circuit is further configured to determine whether the reference count is greater than a threshold value,
• if the reference count is greater than the threshold value, the flash memory management circuit is further configured to instruct to program first data corresponding to the first write command into at least one first physical unit among the physical units based on the first operating mode, wherein each memory cell in the at least one first physical unit is configured to store the first number of bit data,
• if the reference count is not greater than the threshold value, the flash memory management circuit is further configured to instruct to program the first data into at least one second physical unit among the physical units based on a second operating mode, wherein each memory cell in the at least one second physical unit is configured to store a second number of bit data,
• wherein the second number is greater than the first number,
• the flash memory management circuit is further configured to determine, whether second data is to be programmed based on the first operating mode or the second operating mode,
• the flash memory management circuit is further configured to adjust the reference count in response to that the second data is to be programmed based on the second operating mode and a compression resolution of the second data is a first resolution, and
• the flash memory management circuit is further configured not to adjust the reference count in response to that the second data is to be programmed based on the first operating mode and the compression resolution of the second data is the first resolution.

A memory storage device, comprising:

• a connection interface unit, configured to couple to a host system;
• a rewritable non-volatile memory module comprising a plurality of physical units;
• and
• a flash memory control circuit unit, coupled to the connection interface unit and the rewritable non-volatile memory module,
• wherein the flash memory control circuit unit is configured to select at least one logical unit meeting a first condition, wherein the at least one logical unit meeting the first condition is mapped to at least one third physical unit among the physical units, and each memory cell of the at least one third physical unit is configured to store a first number of bit data and programmed based on a first operating mode,
• wherein the flash memory control circuit unit is further configured to determine a reference count according to a number of the selected logical unit, wherein the reference count reflects a logical data volume corresponding to the selected logical unit,
• wherein the flash memory control circuit unit is further configured to receive a first write command,
• wherein the flash memory control circuit unit is further configured to determine whether the reference count is greater than a threshold value,
• if the reference count is greater than the threshold value, the flash memory control circuit unit is further configured to instruct to program first data corresponding to the first write command into at least one first physical unit among the physical units based on the first operating mode, wherein each memory cell in the at least one first physical unit is configured to store the first number of bit data,
• if the reference count is not greater than the threshold value, the flash memory control circuit unit is further configured to instruct to program the first data into at least one second physical unit among the physical units based on a second operating mode, wherein each memory cell in the at least one second physical unit is configured to store a second number of bit data,
• wherein the second number is greater than the first number,
• the flash memory control circuit unit is further configured to determine, whether second data is to be programmed based on the first operating mode or the second operating mode,
• the flash memory control circuit unit is further configured to adjust the reference count in response to that the second data is to be programmed based on the second operating mode and a compression resolution of the second data is a first resolution, and
• the flash memory control circuit unit is further configured not to adjust the reference count in response to that the second data is to be programmed based on the first operating mode and the compression resolution of the second data is the first resolution.