Shadow mask area correction for tunnel junctions

A method for correcting an area of overlap between two films created by sequential shadow mask evaporations, the method comprising:

• performing at least one process selected from a group consisting of:
• correcting design features in an original layout to generate a corrected layout using a software tool, such that the corrected layout modifies shapes of the design features;
• and
• correcting the design features in the original layout to generate the corrected layout using a lithographic tool, such that the corrected layout modifies the shapes of the design features;
• patterning the modified shapes of the design features at locations on a wafer according to the corrected layout using the lithographic tool, wherein the corrected layout includes a positional tilt correction;
• and
• depositing a first film by an initial shadow mask evaporation and a second film by a subsequent shadow mask evaporation to produce a corrected junction at the locations on the wafer, such that the first film and the second film have an overlap.