Photolithographic patterning of devices

A method of making a device comprising:

• a) providing a device substrate having one or more target areas for patterning;
• b) providing a fluorinated material layer over the device substrate;
• c) forming one or more lift-off structures at least in part by developing a first pattern of one or more open areas in the fluorinated material layer in alignment with the one or more target areas by contact with a developing agent comprising a fluorinated solvent, wherein the developing agent dissolves the fluorinated material at a first rate;
• d) patterning the device substrate by
• i) etching at least a portion of the one or more target areas using the one or more lift-off structures as an etch mask, or
• ii) depositing one or more active material layers through the first pattern of open areas and onto the one or more target areas, or
• both i) and ii);
• and
• e) removing the one or more lift-off structures by contact, at a temperature that is at least 10° C. higher than contact with the developing agent, with a lift-off agent comprising a fluorinated solvent wherein the lift-off agent dissolves the fluorinated material at a second rate that is at least 150 nm/sec and higher than the first rate.