Back to results
US 10,503,073 B2Granted
Photoresist compositions and methods
AssigneeRohm and Haas Electronic Materials Korea Ltd.
InventorsEui-Hyun Ryu, Min-Kyung Jang, Chang-Young Hong, Dong-Yong Kim, Dong-Je Hong, Hae-Jin Lim, Myung Yeol Kim, Hyun Jeon
Life of this patent
Estimating the term…
Abstract
New photoresists are provided that are useful in a variety of applications, including negative-tone development processes. Preferred resists comprise a first polymer that comprises (i) first units comprising a nitrogen-containing moiety that comprises an acid-labile group; and (ii) second units that (1) comprise one or more hydrophobic groups and (2) are distinct from the first units.
Claims15
A photoresist composition comprising:
- (a) a first polymer comprising:
- (i) first units comprising a nitrogen-containing moiety that comprises an acid-labile group;
- (ii) second units that (1) comprise one or more hydrophobic groups and (2) are distinct from the first units,
- (iii) third units that (1) comprise one or more hydrophobic groups and (2) are distinct from the first and second units, and wherein the first polymer is free of silicon or flourine;
- (b) one or more acid generators;
- and
- (c) a second polymer that (1) comprises acid-labile groups and (2) is distinct from the first polymer.
4 more elements
Dependencies are inferred from the claim text.