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US 10,503,072 B2Granted
Methods of fabricating semiconductor devices with flattened hardmask layers
AssigneeSamsung Electronics Co., Ltd.
InventorsDoYoung Kim, Kyoungsil Park
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Abstract
Methods of fabricating semiconductor devices may include forming a hardmask layer including a photosensitive hardmask material on lower structures. The hardmask layer may include a lower portion and an upper portion thereon. An exposing and developing process may be performed on the hardmask layer to remove the upper portion of the hardmask layer and thereby form a hardmask structure with a substantially flat top surface.
Claims20
A method of fabricating a semiconductor device, comprising:
- forming a hardmask layer comprising a photosensitive hardmask material on a structure, the hardmask layer having a top surface comprising a first top surface on a lower portion of the hardmask layer and a second top surface, on an upper portion of the hardmask layer, wherein the first top surface is located at a first level and the second top surface is located at a second level higher than the first level;
- and
- performing an exposing and developing process on the hardmask layer that removes the upper portion of the hardmask layer while leaving the lower portion of the hardmask layer intact and forms a hardmask structure with a substantially flat top surface, wherein the flat top surface is located at a third level equal to or lower than the first level, and wherein the third level is higher than an upper surface of the structure.
A method of fabricating a semiconductor device, comprising:
- forming a structure on a substrate;
- forming a hardmask layer comprising a photosensitive hardmask material on the structure, the hardmask layer having a top surface comprising a first top surface on a lower portion of the hardmask layer and a second top surface on an upper portion of the hardmask layer,
- wherein the first top surface is located at a first level and the second top surface is located at a second level higher than the first level,
- wherein the upper portion of the hardmask layer is between the first level and the second level in a vertical direction, and
- wherein the lower portion of the hardmask layer is below the first top surface of the hardmask layer in a vertical direction;
- performing an exposing process on the hardmask layer wherein a depth of focus of a light source is configured to selectively expose a portion of the hardmask layer;
- and
- performing a developing process on the hardmask layer that removes the upper portion of the hardmask layer and forms a hardmask structure with a substantially flat top surface,
- wherein the flat top surface is located at a third level equal to or lower than the first level, and
- wherein the third level is higher than an upper surface of the structure.
7 more elements
Dependencies are inferred from the claim text.