Method for forming resist pattern

A method for forming a resist pattern comprising:

• forming a first contact hole pattern including a hole portion and a hole-unformed portion, which includes forming a positive-type resist film on a support, exposing the positive-type resist film, and alkali developing the exposed positive-type resist film;
• preparing a structure including the first contact hole pattern and a first layer which covers the first contact hole pattern, which includes forming a first layer by applying a solution including an acid or a thermal acid generator onto the first contact hole pattern so as to cover the first contact hole pattern and be in contact with a surface in a radial direction of the hole portion of the first contact hole pattern;
• forming an organic solvent-soluble region and an organic solvent-insoluble region in the hole-unformed portion of the alkali-developed resist film by heating the structure to cause the action of an acid generated from the thermal acid generator or an acid in the first layer and reduce solubility of the alkali-developed resist film in the periphery of the hole portion of the first contact hole pattern in an organic solvent, wherein the organic solvent-insoluble region is formed in the periphery of the hole portion of the first contact hole pattern by the reduction of solubility of the alkali-developed resist film in an organic solvent, and the organic solvent-soluble region is the remaining hole- unformed portion of the alkali-developed resist film excluding the organic solvent-insoluble region;
• and
• forming a second contact hole pattern in the hole-unformed portion of the alkali-developed resist film, which includes developing the heated structure by an organic solvent to remove the organic solvent-soluble region in the hole-unformed portion of the alkali-developed resist film while maintaining the hole portion of the first contact hole pattern.