Photolithographic patterning of devices

A method of patterning a device, comprising:

• a) over a device substrate, forming a resist precursor structure including
• i) a first fluoropolymer layer including a first fluoropolymer material having a fluorine content of at least 50% by weight and substantially soluble in a first hydrofluoroether solvent or in a first perfluorinated solvent, but substantially less soluble in a second hydrofluoroether solvent relative to both the first hydrofluoroether and the first perfluorinated solvent, and
• ii) a second fluoropolymer layer including a second fluoropolymer material having a fluorine content less than that of the first fluoropolymer material and substantially soluble in the first or second hydrofluoroether solvents, but substantially less soluble in the first perfluorinated solvent relative to both the first and second hydrofluoroether solvents;
• and
• b) photo-lithographically forming a patterned resist structure and a complementary pattern of uncovered substrate, wherein such forming includes contact of at least a portion of the second fluoropolymer layer with a first fluorinated developing agent comprising the first or second hydrofluoroether solvent.