Manufacturing method of a TFT substrate and structure

A TFT substrate structure comprising:

• a substrate;
• TFTs arranged in an array on the substrate;
• a first passivation layer covering all of the TFTs;
• a color resist layer, a first color block and a second color block disposed on the first passivation layer, wherein a height of the first color block is greater than the height of the second color block;
• a second passivation layer covering the first passivation layer, the color resist layer, the first color resist block and the second color resist block;
• an integral main photoresist spacer, a sub-photoresist spacer and a black matrix disposed on the second passivation layer, wherein the main photoresist spacer is correspondingly located above the first color resist block, and the sub-photoresist spacer is correspondingly located above the second color resist block;
• and
• a pixel electrode and a common electrode disposed on the black matrix, wherein the pixel electrode is connected to a drain of the TFT through a hole penetrating the black matrix, the second passivation layer and the first passivation layer;
• and the hole is completely blocked by the drain of the TFT.

A manufacturing method of a TFT substrate comprising:

• Step S1, providing a substrate, forming TFTs arranged in an array in the substrate, and depositing a first passivation layer covering all the TFTs;
• Step S2, depositing a color resist on the first passivation layer and patterning to a color resist layer, a first color resist block and a second color resist block, wherein the height of the first color resist block is greater than the second of the color resist block;
• Step S3, depositing a second passivation layer on the first passivation layer, the color resist layer, the first color resist block and the second color resist block;
• Step S4, depositing a black photoresist on the second passivation layer and patterning to form a main integrated photoresist spacer, a sub-photoresist spacer and a black matrix, and a hole through the black matrix, the second passivation layer and the first passivation layer;
• wherein the main photoresist spacer is located above the first color resist block, the sub-photoresist spacer is located above the second color resist block;
• the hole is completely blocked by a drain of the TFT;
• Step S5, depositing a transparent conductive film on the integrated main photoresist spacer, the sub-photoresist spacer and the black matrix and patterning to form a pixel electrode and a common electrode, and the pixel electrode is exposed through the hole connected to the drain of the TFT;
• wherein, the patterning in Step S2 is performed with a slit diffraction type mask;
• and
• the color resist deposited in Step S2 comprises a red color resist, a green color resist and a blue color resist;
• wherein, the material of the transparent conductive film is indium tin oxide;
• wherein the material of the first passivation layer and the second passivation layer is silicon nitride, silicon oxide or a combination;
• wherein, the first color resist block and the second color resist block are island shaped.