Measuring method and measuring arrangement for an imaging optical system
AssigneeCarl Zeiss SMT GmbH
InventorsUlrich Wegmann, Hans-Michael Stiepan, Jochen Hetzler
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Abstract
A measurement arrangement and a method for measuring a wavefront aberration of an imaging optical system (10) of a microlithographic projection exposure apparatus. The method includes separate measurement of respective wavefront aberrations of different partial arrangements (M1; M2; M3; M1, M3) of the optical elements.
Claims18
An apparatus, comprising:
- a partial optical arrangement of a microlithographic exposure apparatus, wherein the partial optical arrangement comprises at least two optical elements;
- and
- a measurement arrangement for measuring the partial optical arrangement of the microlithographic exposure apparatus, comprising:
- a wavefront measurement apparatus configured to measure a wavefront aberration of the partial optical arrangement with measurement radiation, and
- at least one adaptation module comprising one or more diffractive structure patterns that are operated in reflection or in transmission,
- wherein the adaptation module is configured for manipulation of the wavefront of the measurement radiation such that the partial optical arrangement being measured and the at least one adaptation module in combination form an imaging optical arrangement.
A method for measuring a wavefront aberration of an imaging optical system of a microlithographic projection exposure apparatus, comprising a plurality of optical elements configured to image a pattern from an object plane into an image plane, comprising:
- arranging a measurement arrangement for measuring different partial optical arrangements of the optical elements in an optical path of measurement radiation, wherein each of the different partial optical arrangement comprises at least two optical elements;
- measuring a first wavefront aberration of a first partial optical arrangement of the optical elements;
- and
- measuring, separately from the measurement of the wavefront aberration of the first partial optical arrangement of the optical elements, a second wavefront aberration of a second partial optical arrangement of the optical elements.
A measurement arrangement for measuring a partial optical arrangement comprising at least two optical elements of a microlithographic projection exposure apparatus, comprising:
- a wavefront measurement apparatus configured to measure a wavefront aberration of imaging optics with measurement radiation, and
- at least one adaptation module
- which has one or more diffractive structure patterns that are operated in reflection or in transmission, and
- which is configured for manipulation of the wavefront of the measurement radiation such that the partial optical arrangement being measured and the at least one adaptation module in combination form an imaging optical arrangement, wherein the manipulation of the wavefront of the measurement radiation comprises manipulating an output of the partial optical arrangement that deviates by at least λ from an ideal spherical wave to a wavefront that does not deviate by more than λ at any point from an ideal spherical wave.
Dependencies are inferred from the claim text.