US 10,501,862 B2Granted

Plating system, a plating system control method, and a storage medium containing a program for causing a computer to execute the plating system control method

AssigneeEbara Corporation

InventorsTakashi Mitsuya, Ryuya Koizumi, Toshio Yokoyama, Masashi Shimoyama, Kunio Oishi

Life of this patent

Estimating the term…

Loading patent…

Abstract

A plating system comprising a plating tank for applying plate processing to a substrate, a sensor configured to measure actual plating film thickness of the substrate, and a controller configured to control plating current supplied to the plating tank and plating time for the plate processing of the substrate within the plating tank. The controller is capable of setting target plating film thickness, plating current, and plating time as a plate processing recipe. At least one of the plating current and the plating time is automatically corrected so that the actual plating film thickness and the target plating film thickness become equal to each other, and the result is reflected in the plate processing for the subsequent substrate.

Claims12

Dependent claims

A plating system comprising:

a plating tank for applying plate processing to a substrate;
a sensor configured to measure actual plating film thickness of the substrate;
a controller configured to control plating current and plating time for the plate processing of the substrate within the plating tank;
wherein the controller is capable of setting target plating film thickness, plating current, and plating time as a plate processing recipe;
in accordance with the actual plating film thickness and the target plating film thickness, at least one of the plating current and the plating time is automatically corrected so that the actual plating film thickness and the target plating film thickness become equal to each other, and at least one of the corrected plating current and the corrected plating time is reflected in the plate processing for the subsequent substrate;
wherein the controller corrects the plating current without correcting the plating time when plating current density corresponding to the corrected plating current is between first current density and second current density, inclusive;
and
wherein when the plating current density is lower than the first current density or higher than the second current density, the controller corrects the plating current to correct first film thickness difference of measured film thickness difference between the target plating film thickness and the actual plating film thickness, and corrects the plating time to correct second film thickness difference that is difference between the measured film thickness difference and the first film thickness difference.

5 more elements

A plating system comprising:

a plating tank for applying plate processing to a substrate;
a sensor configured to measure actual plating film thickness of the substrate;
a controller configured to control plating current and plating time for the plate processing of the substrate within the plating tank;
wherein the controller is capable of setting target plating film thickness, plating current, and plating time as a plate processing recipe;
in accordance with the actual plating film thickness and the target plating film thickness, at least one of the plating current and the plating time is automatically corrected so that the actual plating film thickness and the target plating film thickness become equal to each other, and at least one of the corrected plating current and the corrected plating time is reflected in the plate processing for the subsequent substrate;
wherein the controller is configured to be set so that the plate processing is carried out on the substrate in a plurality of steps, have or obtain the plating current and the plating time, which are set with respect to each step, as the recipe, and correct the plating current and/or the plating time in each step;
wherein when the plating current is corrected, the correction amount of the plating current is corrected by adding the correction amount to a value of the plating current;
and the correction amount is set to a value common to the steps;
wherein the controller is further capable of setting an aperture ratio that is a fraction obtained by dividing actual plating area by area of the substrate, or the actual plating area, as a preset recipe item;
wherein by using the following Expressions 1 and 2,
T
R
=
a
+
bT
T
+
c
⁢
⁢
γ
ρ
⁢
⁢
A
⁢
t
T
[
Expression
⁢
⁢
1
]
Δ
⁢
⁢
I
=
ρ
⁢
⁢
A
γ
⁢
⁢
bt
s
⁢
{
a
+
(
b
-
1
)
⁢
T
T
}
+
c
b
[
Expression
⁢
⁢
2
]
where TR is the actual plating film thickness [μm];
TT is the target plating film thickness [μm];
tT is the theoretical plating time [min] for obtaining target plating film thickness;
ρ is the aperture ratio;
A is the substrate area;
γ is theoretical deposition amount of the plating material;
ts is total plating time which is determined by recipe setting;
and a, b and c are multiple regression coefficients;
the controller calculates the multiple regression coefficients a, b and c by multiple regression analysis from the measured values of the actual plating film thickness TR after the plate processing in the plurality of substrates and the Expression 1, calculates correction amount ΔI of the plating current from the calculated multiple regression coefficients a, b and c and the Expression 2, and calculates the corrected plating current by adding the correction amount ΔI to the plating current determined by the recipe setting of each of the plurality of steps.

77 more elements

A plating system comprising:

a plating tank for applying plate processing to a substrate;
a sensor configured to measure actual plating film thickness of the substrate;
a controller configured to control plating current and plating time for the plate processing of the substrate within the plating tank;
wherein the controller is capable of setting target plating film thickness, plating current, and plating time as a plate processing recipe;
in accordance with the actual plating film thickness and the target plating film thickness, at least one of the plating current and the plating time is automatically corrected so that the actual plating film thickness and the target plating film thickness become equal to each other, and at least one of the corrected plating current and the corrected plating time is reflected in the plate processing for the subsequent substrate;
wherein when the plating current is corrected, the plating current is corrected by adding the correction amount to the plating current, and the correction amount of the plating current is a result of multiplying the plating current by a coefficient that is a constant value;
wherein the controller is further capable of setting the aperture ratio that is a fraction obtained by dividing the actual plating area by the substrate area, or the actual plating area, as a preset recipe item;
wherein by using the following Expressions 3 and 4,
T
R
=
a
+
bT
T
+
c
⁢
⁢
γ
ρ
⁢
⁢
A
⁢
t
T
[
Expression
⁢
⁢
3
]
α
=
ρ
⁢
⁢
AbT
T
ρ
⁢
⁢
A
⁡
(
T
T
-
a
)
-
γ
⁢
⁢
ct
s
-
1
[
Expression
⁢
⁢
4
]
where TR is the actual plating film thickness [μm];
TT is the target plating film thickness [μm];
tT is the theoretical plating time [min] for obtaining target plating film thickness;
p is the aperture ratio;
A is the substrate area;
γ is theoretical deposition amount of the plating material;
ts is total plating time which is determined by recipe setting;
and a, b and c are multiple regression coefficients;
the controller calculates the multiple regression coefficients a, b and c by multiple regression analysis from the measured value of the actual plating film thickness TR after the plate processing in the plurality of substrates and the Expression 3, calculates a correction coefficient α for the plating current from the calculated multiple regression coefficients a, b and c and the Expression 4;
and calculates corrected plating current by multiplying the plating current, which is determined by the recipe setting of each of the plurality of steps, by (1+α).

72 more elements

A plating system comprising:

a plating tank for applying plate processing to a substrate;
a sensor configured to measure actual plating film thickness of the substrate;
a controller configured to control plating current and plating time for the plate processing of the substrate within the plating tank;
wherein the controller is capable of setting target plating film thickness, plating current, and plating time as a plate processing recipe;
in accordance with the actual plating film thickness and the target plating film thickness, at least one of the plating current and the plating time is automatically corrected so that the actual plating film thickness and the target plating film thickness become equal to each other, and at least one of the corrected plating current and the corrected plating time is reflected in the plate processing for the subsequent substrate;
wherein when the plating time is corrected, the plating time is corrected by adding the correction amount to the plating time;
and the correction amount of the plating time is a result of multiplying the plating time by a coefficient that is a constant value;
wherein the controller is further capable of setting the aperture ratio that is a fraction obtained by dividing the actual plating area by the substrate area, or the actual plating area, as a preset recipe item;
wherein by using the following Expressions 5 and 6,
T
R
=
a
+
bT
T
+
c
⁢
⁢
γ
ρ
⁢
⁢
A
⁢
t
T
[
Expression
⁢
⁢
5
]
β
=
ρ
⁢
⁢
AbT
T
ρ
⁢
⁢
A
⁡
(
T
T
-
a
)
-
γ
⁢
⁢
ct
s
-
1
[
Expression
⁢
⁢
6
]
where TR is the actual plating film thickness [μm];
TT is the target plating film thickness [μm];
tT is the theoretical plating time [min] for obtaining target plating film thickness;
ρ is the aperture ratio;
A is the substrate area, γ is theoretical deposition amount of the plating material;
ts is total plating time which is determined by recipe setting;
and a, b and c are multiple regression coefficients,
the controller calculates the multiple regression coefficients a, b and c by multiple regression analysis from the measured values of the actual plating film thickness TR after the plate processing in the plurality of substrates and the Expression 5, calculates correction coefficient β of the plating time from the calculated multiple regression coefficients a, b and c and the Expression 6, and calculates corrected plating time by multiplying the plating time, which is determined by the recipe setting of each of the plurality of steps, by (1+β).

71 more elements

Dependencies are inferred from the claim text.

Facts

Application: 15/669,735Filed 4 Aug 2017
Priority: JP 2016-1557108 Aug 2016
Published: US 2018/0038008 A18 Feb 2018
Granted: 10 Dec 2019
Term ends: Not estimatedThe source records don’t support an estimate.

Classification20 codes

C25D 17/001
Constructional parts, or assemblies thereof, of cells for electrolytic coating: apparatus specially adapted for electrolytic coating of wafers,…
C25D 21/12
Processes for servicing or operating cells for electrolytic coating: process control or regulation
H10P 72/0476
Comprising a chamber adapted to a particular process: comprising at least one plating chamber
H10P 72/0604
Apparatus for monitoring, sorting, marking, testing or measuring: process monitoring, e.g. flow or thickness monitoring

Family

US 2018/0038008 A1Pre-grant publication · published 8 Feb 2018
US 10,501,862 B2This patent

From the US filing history. Foreign family members aren’t listed.

Timeline

Citations

Open elsewhere

Building an agent or pulling many patents? Use the API or MCP server instead of scraping pages. Get an API key