Semiconductive shield composition

Abstract

A wire or cable comprising an insulation layer and a semiconducting shield layer over and in contact with the insulation layer and strippable from the insulation layer, the second semiconducting shield layer made from the composition comprising: (A) 45-52% ethylene vinyl acetate (EVA) comprising 28-45% units derived from vinyl acetate (VA) based on the weight of the EVA; (B) 30-45% carbon black having (1) 80-1 15 milliliters per 100 grams (ml/100 g) DBP absorption value, (2) 30-60 milligrams per gram (mg/g) iodine absorption (I2NO), and (3) 0.3-0.6 grams/milliliter (g/ml) apparent density; (C) 5-20% acrylonitrile butadiene rubber (NBR) comprising 25-55% units derived from acrylonitrile (AN) based on the weight of the NBR; (D) 0.2-2% phenolic antioxidant; and (E) 0.5-2% organic peroxide.

Dependencies are inferred from the claim text.