Microelectronic modules with sinter-bonded heat dissipation structures and methods for the fabrication thereof

A microelectronic module, comprising:

• a module substrate having a frontside, a cavity, and cavity sidewalls defining the cavity;
• a metallic plating layer formed on the cavity sidewalls;
• a microelectronic device containing Radio Frequency (RF) amplification circuitry, the microelectronic device attached to the frontside of the module substrate at a location overlying the cavity;
• and
• a sinter-bonded heat dissipation structure, comprising:
• a prefabricated thermally-conductive body positioned in the cavity and thermally coupled to the microelectronic device;
• and
• a sinter bond layer bonding the prefabricated thermally-conductive body to the module substrate, the sinter bond layer contacting the cavity sidewalls and an outer peripheral surface of the prefabricated thermally-conductive body;
• wherein the module substrate comprises an RF grounding layer electrically coupled to RF amplification circuitry through the prefabricated thermally-conductive body, through the metallic plating layer, and through the sinter bond layer.

A microelectronic module, comprising:

• a module substrate having a frontside, a cavity having a mouth formed in the frontside, and cavity sidewalls defining the cavity;
• a microelectronic device attached to the frontside of the module substrate and covering the mouth of the cavity;
• a sinter-bonded heat dissipation structure, comprising:
• a prefabricated thermally-conductive body positioned in the cavity and thermally coupled to the microelectronic device;
• and
• a sinter bond layer bonding the prefabricated thermally-conductive body to the module substrate, the sinter bond layer contacting the cavity sidewalls and an outer peripheral surface of the prefabricated thermally-conductive body;
• and
• a component bond layer joining the microelectronic device to the module substrate and to the sinter-bonded heat dissipation structure, the component bond layer comprising:
• a central portion contacting the prefabricated thermally-conductive body and the microelectronic device;
• and
• an outer peripheral portion extending around the central portion of the sinter bond layer and around the mouth of the cavity, the outer peripheral portion of the component bond layer contacting the microelectronic device and the frontside of the module substrate.