Imaging sensors with per-pixel control

An image sensor comprising an array of imaging pixels, wherein each imaging pixel comprises:

• a photodiode;
• a floating diffusion region;
• and
• first and second transistors interposed between the photodiode and the floating diffusion region, wherein the first transistor is coupled directly to the second transistor without any intervening structures, wherein the first transistor of each imaging pixel has a gate that receives a horizontal transfer control signal and wherein the second transistor of each imaging pixel has a gate that receives a vertical transfer control signal;
• and
• a third transistor coupled between a power supply terminal and a node that is interposed between the first and second transistors.

An image sensor comprising an array of imaging pixels arranged in rows and columns, wherein each imaging pixel is positioned in a respective row and a respective column and wherein each imaging pixel comprises:

• a photodiode;
• a charge storage region;
• a floating diffusion region;
• first and second transistors interposed between the photodiode and the charge storage region, wherein the first transistor of each imaging pixel has a gate that receives a horizontal transfer control signal associated with the respective row of the imaging pixel and wherein the second transistor of each imaging pixel has a gate that receives a vertical transfer control signal associated with the respective column of the imaging pixel;
• and
• third and fourth transistors interposed between the charge storage region and the floating diffusion region, wherein the third transistor of each imaging pixel has a gate that receives an additional horizontal transfer control signal associated with the respective row of the imaging pixel and wherein the fourth transistor of each imaging pixel has a gate that receives an additional vertical transfer control signal associated with the respective column of the imaging pixel.