Temperature instability-aware circuit

A circuit, comprising:

• a swing reduction circuit coupled between an input/output pad and a buffer circuit,
• wherein the swing reduction circuit is configured to either increase an input voltage in response to the input voltage being equal to a first supply voltage and provide the increased input voltage to the buffer circuit, or decrease the input voltage in response to the input voltage being equal to a second supply voltage and provide the decreased input voltage to the buffer circuit, and
• wherein the swing reduction circuit comprises:
• a first metal-oxide-semiconductor field-effect-transistor gated by a first bias voltage;
• and
• a second metal-oxide-semiconductor field-effect-transistor drained by the first bias voltage.

A method, comprising:

• receiving an input voltage ranging from a first supply voltage to a second supply voltage;
• and
• either increasing a first voltage received by at least one p-type metal-oxide-semiconductor field-effect-transistor of a buffer circuit in response to the input voltage being equal to the first supply voltage, or decreasing a second voltage received by at least one n-type metal-oxide-semiconductor field-effect-transistor of the buffer circuit in response to the input voltage being equal to the second supply voltage,
• wherein the first voltage is increased to a first bias voltage applied to a gate of a first transistor that is coupled between the input voltage and the buffer circuit,
• wherein the second voltage is decreased to a second bias voltage applied to a gate of a second transistor that is coupled between the input voltage and the buffer circuit.