Apparatus and method for determining optimum stack number of RF switch
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsByeong Hak Jo, Jeong Hoon Kim, Hyun Paek
Life of this patent
Estimating the term…
Loading patent…
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsByeong Hak Jo, Jeong Hoon Kim, Hyun Paek
Estimating the term…
An apparatus for determining an optimum stacking number of an RF switch, in which a gate-off voltage and a body-off voltage are used to control transistors stacked in series to enter an OFF state. The apparatus includes a memory configured to store a peak voltage of a high-frequency signal in a corresponding band, and a gate limiting voltage, a drain-source limiting voltage, and a body limiting voltage in a corresponding process for each of the transistors, and a processor configured to calculate a gate terminal voltage, a drain-source voltage, and a body terminal voltage using the peak voltage, the gate limiting voltage, the drain-source limiting voltage, and the body limiting voltage and to determine an optimum stacking number based on the gate terminal voltage, the gate limiting voltage, the drain-source voltage, the drain-source limiting voltage, the body terminal voltage, and the body limiting voltage.
An apparatus for determining an optimum stacking number of a radio frequency (RF) switch, in which a gate-off voltage and a body-off voltage are used to control transistors stacked in series to enter an OFF state, the apparatus comprising:
A method for determining an optimum stacking number of a radio frequency (RF) switch, in which a gate-off voltage and a body-off voltage are used to control transistors stacked in series to enter an OFF state, the method comprising:
An apparatus comprising:
Dependencies are inferred from the claim text.