Amplfiers and related integrated circuits

A packaged electronic device comprising:

• a substrate;
• a first input package lead coupled to the substrate and configured to receive a first portion of a radio frequency (RF) input signal;
• a second input package lead coupled to the substrate and configured to receive a second portion of the RF input signal;
• a first output package lead coupled to the substrate;
• a second output package lead coupled to the substrate;
• a first transistor die having a silicon-based transistor, wherein the first transistor die includes a first die input coupled to the first input package lead, and a first die output, wherein the first die input receives the first portion of the RF input signal, and the first transistor die amplifies the first portion of the RF input signal and provides an amplified first portion of the RF input signal at the first die output;
• a second transistor die having a gallium nitride transistor, wherein the second transistor die includes a second die input coupled to the second input package lead, and a second die output, wherein the second die input receives the second portion of the RF input signal, and the second transistor die amplifies the second portion of the RF input signal and provides an amplified second portion of the RF input signal at the second die output;
• first impedance matching circuitry coupled between the first die output and the first output package lead, the first impedance matching circuitry being configured as a shunt inductance impedance matching circuit that receives the amplified first portion of the RF input signal and produces a first output signal at the first output package lead, wherein the first impedance matching circuitry includes
• a first inductive element connected between the first die output and the first output package lead,
• a second inductive element connected between the first die output and a first reference voltage node;
• and
• second impedance matching circuitry coupled between the second die output and the second output package lead, the second impedance matching circuitry being configured as a shunt capacitance impedance matching circuit that receives the amplified second portion of the RF input signal and produces a second output signal at the second output package lead, and wherein the first impedance matching circuitry and the second impedance matching circuitry are configured so that the second output signal at the second output package lead is shifted by 90 degrees relative to the first output signal at the first output package lead, wherein the second impedance matching circuitry includes
• a first capacitive element electrically connected to a ground reference voltage node for the circuit,
• a third inductive element connected between the second die output and the first capacitive element,
• a fourth inductive element connected between the first capacitive element and the second output package lead.