Reflector, vertical cavity light-emitting device, and method of producing the same

Abstract

A vertical cavity light-emitting device includes: a semiconductor substrate having a hexagonal crystal structure; a line mask extending linearly along at least one of a [11-20] direction and directions equivalent to the [11-20] direction on a c-plane of the semiconductor substrate; a first reflector provided on an exposed region exposed from the line mask on the c-plane of the semiconductor substrate, the first reflector comprising a high refractive index semiconductor film and a low refractive index semiconductor film having a refractive index smaller than that of the high refractive index semiconductor film, the high refractive index semiconductor film and the low refractive index semiconductor film being alternately layered; a light-emitting structure layer provided on the first reflector; and a second reflector disposed on the light-emitting structure layer so as to be opposed so the first reflector.

Dependencies are inferred from the claim text.