Semiconductor devices with depleted heterojunction current blocking regions

A semiconductor vertical resonant cavity light source, comprising:

• an upper mirror comprising alternating low refractive index mirror layers and high refractive index mirror layers and a lower mirror comprising alternating low refractive index mirror layers and high refractive index mirror layers;
• at least one active region for light generation between said upper mirror and said lower mirror;
• at least one cavity spacer layer between at least one of said upper mirror and said lower mirror and said active region;
• said light source including an inner mode confinement region and an outer current blocking region;
• a depleted heterojunction current blocking region (DHCBR) including a depleting impurity region comprising at least one depleting impurity region within said outer current blocking region of at least one of said upper mirror, said lower mirror, and said active region, and
• a middle layer including a conducting channel within said inner mode confinement region that is framed by said DHCBR, wherein said middle layer comprises an epitaxially regrown interface,
• wherein said depleting impurity has a maximum concentration that is within 700 Åof said epitaxially regrown interface, and
• wherein said DHCBR forces current flow into said conducting channel during normal operation of said light source.

A semiconductor vertical resonant cavity light source, comprising:

• an upper mirror comprising alternating low refractive index mirror layers and high refractive index mirror layers and a lower mirror comprising alternating low refractive index mirror layers and high refractive index mirror layers;
• at least one active region for light generation between said upper mirror and said lower mirror;
• at least one cavity spacer layer between at least one of said upper mirror and said lower mirror and said active region;
• said light source including an inner mode confinement region and an outer current blocking region;
• a depleted heterojunction current blocking region (DHCBR) including a depleting impurity region comprising a first depleting impurity specie comprising a Column II acceptor and a second depleting impurity comprising oxygen within said outer current blocking region of at least one of said upper mirror, said lower mirror, and said active region, and
• a middle layer including a conducting channel within said inner mode confinement region that is framed by said DHCBR,
• wherein said DHCBR forces current flow into said conducting channel during normal operation of said light source.