Electronic device and solid state imaging apparatus

An electronic device, comprising:

• a first electrode;
• a second electrode;
• and
• a photoelectric conversion layer between the first electrode and the second electrode, wherein
• the first electrode is formed from a transparent conductive material having a work function ranging from 5.2 to 5.9 eV, and
• the transparent conductive material is composed of indium oxide and cobalt, with the cobalt accounting for 10 to 30 atom % of a total amount, 100 atom % of indium and cobalt.

An electronic device, comprising:

• a first electrode;
• a second electrode;
• and
• a photoelectric conversion layer between the first electrode and the second electrode, wherein
• the first electrode is formed from a transparent conductive material having a work function ranging from 5.2 to 5.9 eV,
• the first electrode has a specific resistance smaller than 1×10−2 Ω·cm,
• the transparent conductive material is composed of indium oxide and at least one metal species selected from a group consisting of cerium, gallium, tungsten, and titanium, with the metal species accounting for 0.5 to 10 atom % of a total amount, 100 atom % of indium and the metal species,
• the first electrode has a refractive index of 1.9 to 2.2, and
• the first electrode has a surface roughness Ra no larger than 1 nm.

An electronic device, comprising:

• a first electrode;
• a second electrode;
• and
• a photoelectric conversion layer between the first electrode and the second electrode, wherein
• the first electrode is formed from a transparent conductive material having a work function ranging from 5.2 to 5.9 eV,
• the transparent conductive material is formed from a material composed of indium oxide and cerium added thereto, and
• the first electrode has a thickness ranging from 5×10−8 to 2×10−7 m and a specific resistance no smaller than 1×10−3 Ω·cm and smaller than 1×10−2 Ω·cm.

An electronic device, comprising:

• a first electrode;
• a second electrode;
• and
• a photoelectric conversion layer between the first electrode and the second electrode, wherein
• the first electrode is formed from a transparent conductive material having a work function ranging from 5.2 to 5.9 eV,
• the transparent conductive material is composed of indium oxide and gallium added thereto, and
• the first electrode has a thickness ranging from 5×10−8 to 1.5×10−7 m and a specific resistance ranging from 1×10−5 to 1×10−3 Ω·cm.

An electronic device, comprising:

• a first electrode;
• a second electrode;
• and
• a photoelectric conversion layer between the first electrode and the second electrode, wherein
• the first electrode is formed from a transparent conductive material having a work function ranging from 5.2 to 5.9 eV,
• the transparent conductive material is composed of indium oxide and tungsten added thereto, and
• the first electrode has a thickness ranging from 5×10−8 to 2×10−7 m and a specific resistance ranging from 1×10−4 to 1×10−3 Ω·cm.

An electronic device, comprising:

• a first electrode;
• a second electrode;
• and
• a photoelectric conversion layer between the first electrode and the second electrode, wherein
• the first electrode is formed from a transparent conductive material having a work function ranging from 5.2 to 5.9 eV,
• the transparent conductive material is composed of indium oxide and titanium added thereto, and
• the first electrode has a thickness ranging from 5×10−8 to 2×10−7 m and a specific resistance ranging from 1×10−4 to 1×10−3 Ω·cm.

An electronic device, comprising:

• a first electrode;
• a second electrode;
• and
• a photoelectric conversion layer between the first electrode and the second electrode, wherein
• the first electrode is formed from a transparent conductive material having a work function ranging from 5.2 to 5.9 eV,
• the transparent conductive material is composed of indium oxide and cobalt added thereto, and
• the first electrode has a thickness ranging from 5×10−8 to 2×10−7 m and a specific resistance ranging from 1×10−4 to 1×10−3 Ω·cm.

An electronic device, comprising:

• a first electrode;
• a second electrode;
• and
• a photoelectric conversion layer between the first electrode and the second electrode, wherein
• the first electrode is formed from a transparent conductive material having a work function ranging from 5.2 to 5.9 eV,
• the first electrode has a specific resistance smaller than 1×10−2 Ω·cm,
• the transparent conductive material is composed of indium oxide and cobalt, with the cobalt accounting for 10 to 30 atom % of a total amount, 100 atom % of indium and cobalt,
• the first electrode has a refractive index of 1.9 to 2.2, and
• the first electrode has a surface roughness Ra no larger than 1 nm.