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US 10,483,464 B1Granted
Resistive switching memory device
AssigneesUchicago Argonne, LLC, The University of Chicago
InventorsBhaswar Chakrabarti, Leonidas E. Ocola, Supratik Guha, Sushant Sonde
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Abstract
Provided herein are resistive switching devices comprising a nanocomposite, an inert electrode and an active electrode. Also provided are methods for preparing and using the disclosed resistive switching devices.
Claims21
A resistive switching device comprising
- a nanocomposite comprising a polymer with a metal oxide infiltrated throughout the polymer;
- an inert electrode and;
- an active electrode, wherein the inert electrode and the active electrode are separated by the nanocomposite, and the active electrode has an area of 1,000 μm2 to 20,000 μm2.
A resistive switching device comprising
- a nanocomposite comprising a polymer with a metal oxide infiltrated throughout the polymer, and the nanocomposite having a porous section with pore sizes of about 1 nm;
- an inert electrode and;
- an active electrode,
- wherein the inert electrode and the active electrode are separated by the nanocomposite.
1 more element
A resistive switching device comprising
- a nanocomposite comprising a polymer with a metal oxide infiltrated throughout the polymer;
- an inert electrode and;
- an active electrode comprising gold or platinum and either silver or copper,
- wherein the inert electrode and the active electrode are separated by the nanocomposite.
1 more element
Dependencies are inferred from the claim text.