Embedded MRAM in interconnects and method for producing the same

A method comprising:

• forming a first interlayer dielectric (ILD) layer including a first metal (Mx) level;
• forming a capping layer over the first ILD layer;
• forming magnetic tunnel junction (MTJ) structures formed in a second ILD over the first capping layer;
• forming a second metal (Mx+1) level in the second ILD layer;
• forming a second capping layer over the second ILD layer;
• forming a third metal (Mx+2) level in a third ILD layer over the second capping layer;
• forming oxide spacers on sides of metal filled vias, the metal filled vias connecting the Mx level to the MTJ;
• forming copper (Cu) filled vias (Vx) connecting the Mx level to the Mx+1 level;
• and
• forming Cu filled vias (Vx+1) connecting the Mx+1 level to the Mx+2 level.