Magnetic element for memory and logic

An apparatus comprising:

• a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier between the free and fixed layers;
• and
• a fin of a finFET, the fin being coupled to a substrate;
• wherein the free magnetic layer includes a top surface, a bottom surface, and a sidewall circumnavigating the free magnetic layer and coupling the bottom surface to the top surface;
• wherein the top surface is rectangular with a plurality of rounded corners;
• wherein the top surface includes:
• (a)(i) a long axis and a short axis, (a)(ii) the short axis is orthogonal to the long axis, (a)(iii) two linear long sides generally parallel to the long axis, and (a)(iv) two linear short sides generally parallel to the short axis;
• wherein:
• (b)(i) a width extends from one of the two linear long sides to another of the two linear long sides, (b)(ii) the width is parallel to the short axis, (b)(iii) a length extends from one of the two linear short sides to another of the two linear short sides, and (b)(iv) the length is parallel to the long axis;
• wherein:
• (c)(i) the fin has opposing sidewalls, (c)(ii) the fin has a fin width, (c)(iii) the fin width includes a maximum width between the opposing sidewalls, and (c)(iv) the fin width is substantially equal to the width.