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US 10,483,450 B1Granted
Internal electric converter
OwnerCody Brian Wabiszewskiinventor
Life of this patent
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Abstract
A semiconductor cell that allows thermally excited electron hole pairs to be harnessed as usable energy. The material bandgap and dopant levels of various layers allows for voltage potential and current to be created. The energy production results in a lowered temperature in the cell. Energy is transferred back to the cell in the form of heat from the surroundings via convection or conduction. Cell layout is a n n++-p++ p configuration and a module has multiple cells.
Claims21
A cell comprising:
- a first substrate with a first substrate first side and a first substrate second side, wherein the first substrate is electrically insulating and thermally conductive;
- a first electrical contact with a first electrical contact first side and a first electrical contact second side, wherein the first electrical contact first side is connected to the first substrate second side;
- a first n-type semiconductor layer with a first n-type dopant concentration and a first n-type semiconductor layer first side and a first n-type semiconductor layer second side, wherein the first n-type semiconductor layer first side is connected to the first electrical contact second side;
- a second n-type semiconductor layer with a second n-type dopant concentration and a second n-type semiconductor layer first side and a second n-type semiconductor layer second side, wherein the second n-type dopant concentration is higher than the first n-type dopant concentration and the second n-type semiconductor layer first side is electrically and directly physically connected to the first n-type semiconductor layer second side;
- a first p-type semiconductor layer with a first p-type dopant concentration and a first p-type semiconductor layer first side and a first p-type semiconductor layer second side, wherein the first p-type semiconductor layer first side is connected to the second n-type semiconductor layer second side;
- a second p-type semiconductor layer with a second p-type dopant concentration and a second p-type semiconductor layer first side and a second p-type semiconductor layer second side, wherein the first p-type dopant concentration is higher than the second p-type dopant concentration and the second p-type semiconductor layer first side is electrically and directly physically connected to the first p-type semiconductor layer second side;
- a second electrical contact with a second electrical contact first side and a second electrical contact second side, wherein the second electrical contact first side is connected to the second p-type semiconductor layer second side;
- a second substrate with a second substrate first side and a second substrate second side, wherein the second substrate is electrically insulating and thermally conductive and the second substrate first side is connected to the second electrical contact second side.
5 more elements
Dependencies are inferred from the claim text.