Light emitting device and manufacturing method thereof

A flexible light emitting device comprising:

• a first light transmissive substrate that comprises a first light transmissive insulator and a conductive layer on the first light transmissive insulator;
• a second light transmissive substrate that comprises a second light transmissive insulator, the second light transmissive substrate disposed with a gap from the first light transmissive substrate;
• a light emitting diode having a light emitting diode body, and first and second electrodes, the first electrode electrically connecting the light emitting diode body to the conductive layer via a conductive bump, the light emitting diode is located between the first light transmissive substrate and the second light transmissive substrate;
• and
• a third light transmissive insulator formed in a space between the first light transmissive substrate and the second light transmissive substrate, the third light transmissive insulator having a thinner thickness than a height of the light emitting diode;
• wherein the first light transmissive substrate in contact with the third light transmissive insulator is formed in a curved shape inwardly from a part where the light emitting diode is laid out and toward a middle portion between an adjoining light emitting diode.

A flexible light emitting device comprising:

• a first light transmissive substrate having a first light transmissive insulator and a conductive layer on the first light transmissive insulator;
• a second light transmissive substrate having a second light transmissive insulator, disposed with a gap from the first light transmissive substrate;
• a light emitting diode having a light emitting diode body, and first and second electrodes, the first electrode electrically connecting the light emitting diode body to the conductive layer via a conductive bump, the light emitting diode is located between the first light transmissive substrate and the second light transmissive substrate;
• and
• a third light transmissive insulator formed in a space between the first light transmissive substrate and the second light transmissive substrate;
• wherein a height of the conductive bump is equal to or higher than 20 μm and equal to or lower than 50 μm, and
• a ratio between a distance from a surface of the light emitting diode to a top of the conductive bump, and, a distance from a center of the conductive bump to a most distant end of the light emitting diode is equal to or larger than 0.12 and equal to or smaller than 0.40.