Optoelectronic device with silicon slice cover arranged downstream of a conversion element

An optoelectronic device, comprising:

• a radiation-emitting semiconductor chip, wherein the emitted radiation is infrared radiation having a wavelength of <1100 nm;
• a conversion element comprising a quantum dot converter material suitable for converting at least part of the emitted radiation into converted radiation, wherein the converted radiation from the quantum dot converter material is infrared radiation having a wavelength of >1200 nm;
• and
• a cover which is substantially transmissive for the converted radiation and which is arranged downstream of the conversion element in a main emission direction,
• wherein the conversion element is arranged on an inner side of the cover facing the semiconductor chip,
• wherein the cover comprises silicon or is a silicon slice comprising an absorption edge, which lies at around 1100 nm, and
• wherein the cover effectively suppresses the emitted radiation.