US 10,483,436 B2Granted

Display apparatus and manufacturing method thereof

AssigneeInnolux Corporation

InventorsKuan-Feng Lee, Ting-Kai Hung, Yu-Hsien Wu, Chia-Hsiung Chang

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Abstract

A display apparatus is provided. The display apparatus includes a substrate, a transistor, a metal layer, and a light-emitting diode. The transistor is disposed on the substrate. The metal layer is disposed on the transistor and electrically connected to the transistor, wherein a first distance is between the upper surface of the metal layer and the substrate in a direction perpendicular to the substrate. The light-emitting diode is disposed on the metal layer, wherein the light-emitting diode includes a light-emitting diode body and an electrode, the light-emitting diode body is electrically connected to the metal layer via the electrode, the light-emitting diode body has a first surface and a second surface opposite to the first surface, the first surface and the second surface are parallel to the substrate, and in the direction above, a second distance is between the first surface and the second surface, wherein the ratio of the second distance to the first distance is greater than or equal to 0.25 and less than or equal to 6.

Claims10

Dependent claims

A manufacturing method of a display apparatus, comprising:

forming a light-emitting diode body on a substrate, wherein a method of forming the light-emitting diode body comprises:
forming a first conductivity type semiconductor material layer, an active material layer, and a second conductivity type semiconductor material layer on the substrate in order;
forming a first patterned photoresist layer on the second conductivity type semiconductor material layer, wherein the first patterned photoresist layer is formed by a half tone process;
performing a reflow process on the first patterned photoresist layer;
and
removing a portion of the first conductivity type semiconductor material layer, a portion of the active material layer, and a portion of the second conductivity type semiconductor material layer using the reflowed first patterned photoresist layer as a mask to form a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer;
and
forming a reflective structure on a sidewall of the light-emitting diode body, wherein a method of forming the reflective structure comprises:
forming a first material layer and a second material layer on the light-emitting diode body in order;
performing a first etching process on the second material layer using a second patterned photoresist layer as a mask;
and
performing a second etching process on the first material layer using the second patterned photoresist layer as a mask.

9 more elements

A manufacturing method of a display apparatus, comprising:

forming a light-emitting diode body on a substrate, wherein a method of forming the light-emitting diode body comprises:
forming a first conductivity type semiconductor material layer, an active material layer, and a second conductivity type semiconductor material layer on the substrate in order;
forming a first patterned photoresist layer on the second conductivity type semiconductor material layer, wherein the first patterned photoresist layer is formed by a half tone process;
performing a reflow process on the first patterned photoresist layer;
and
removing a portion of the first conductivity type semiconductor material layer, a portion of the active material layer, and a portion of the second conductivity type semiconductor material layer using the reflowed first patterned photoresist layer as a mask to form a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer;
and
forming a reflective structure on a sidewall of the light-emitting diode body,
wherein the manufacturing method further comprises forming a first electrode on the second conductivity type semiconductor material layer before the light-emitting diode body is formed, wherein the first patterned photoresist layer covers the first electrode.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/053,786Filed 2 Aug 2018 · division
Priority: CN 2017 1 015969817 Mar 2017
Published: US 2018/0040774 A16 Dec 2018
Granted: 19 Nov 2019
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10H 20/841
Coatings, e.g. passivation layers or antireflective coatings: reflective coatings, e.g. dielectric Bragg reflectors
H10H 20/01335
With a substrate not being Group III-V materials: the light-emitting regions comprising nitride materials
H10H 20/812
Having quantum effect structures or superlattices, e.g. tunnel junctions: within the light-emitting regions, e.g. having quantum confinement…
H10H 20/82
Characterised by their shape, e.g. curved or truncated substrates: roughened surfaces, e.g. at the interface between epitaxial layers

Family

Application62/371,246Us provisional application · filed 5 Aug 2016
Application62/376,925Us provisional application · filed 19 Aug 2016
Application62/394,225Us provisional application · filed 14 Sep 2016
Application62/429,162Us provisional application · filed 2 Dec 2016
Application15/635,220Parent of this division · filed 28 Jun 2017
US 2018/0351047 A1Pre-grant publication · published 6 Dec 2018
US 10,069,041 B2Parent of this division
US 2018/0040774 A1Published application
US 10,483,436 B2This patent

From the US filing history. Foreign family members aren’t listed.

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