Advanced electronic device structures using semiconductor structures and superlattices

A set of semiconductor superlattices comprising:

• a p-type or n-type first semiconductor superlattice comprising a plurality of unit cells each comprising at least two distinct layers formed of a substantially single crystal semiconductor, the p-type or n-type first semiconductor superlattice having a polar crystal structure with a growth axis being substantially parallel to a spontaneous polarization axis of the polar crystal structure, an average composition of the unit cells of the p-type or n-type first semiconductor superlattice exhibiting a monotonic change from an average composition corresponding to a wider band gap (WBG) material to an average composition corresponding to a narrower band gap (NBG) material or from an average composition corresponding to a NBG material to an average composition corresponding to a WBG material along the growth axis, which induces p-type or n-type conductivity;
• a second semiconductor superlattice with a first constant average composition in the direction of the growth axis, wherein the second semiconductor superlattice is adjacent to a first side of the p-type or n-type first semiconductor superlattice in the direction of the growth axis;
• and
• a third semiconductor superlattice with a second constant average composition in the direction of the growth axis, wherein the third semiconductor superlattice is adjacent to a second side of the p-type or n-type first semiconductor superlattice in the direction of the growth axis.