Method of manufacturing solar cell
AssigneePanasonic Intellectual Property Management Co., Ltd.
InventorKeiichiro Masuko
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a solar cell includes: providing an insulating layer on a semiconductor layer provided on at least a part of a principle surface of a semiconductor substrate; providing a mask layer on the insulating layer; removing a part of the mask layer by laser irradiation so as to form a first opening through which the insulating layer is exposed; and removing, by an etching agent, the insulating layer exposed through the first opening so as to form a second opening through which the semiconductor layer is exposed.
Claims17
A method of manufacturing a solar cell comprising:
- providing an insulating layer on a semiconductor layer provided on at least a part of a principle surface of a semiconductor substrate;
- providing a first mask layer on the insulating layer;
- removing a part of the first mask layer by a first laser irradiation so as to form a first opening;
- removing, by a first etching agent, the insulating layer exposed through the first opening so as to form a second opening through which the semiconductor layer is exposed;
- removing, by a second etching agent, the semiconductor layer exposed through the second opening so as to form a third opening through which the semiconductor substrate is exposed;
- removing the first mask layer by a third etching agent;
- providing a second mask layer on the semiconductor substrate exposed through the third opening and on the insulating layer;
- removing a part of the second mask layer located on the insulating layer by a second laser irradiation so as to form a fourth opening through which the insulating layer is exposed;
- and
- removing, by a fourth etching agent, the insulating layer exposed through the fourth opening so as to form a fifth opening through which the semiconductor layer is exposed.
The method of manufacturing the solar cell according to claim
- wherein the semiconductor layer is formed of an n-type semiconductor material containing silicon and the second mask layer is formed of a p-type semiconductor material containing silicon, the method further comprising:
- forming an n-side electrode to be electrically connected to the semiconductor layer exposed through the fifth opening and a p-side electrode to be electrically connected to the second mask layer.
A method of manufacturing a solar cell comprising:
- providing an insulating layer on a semiconductor layer provided on at least a part of a principle surface of a semiconductor substrate, wherein the semiconductor layer is in direct contact with the semiconductor substrate;
- providing a first mask layer on the insulating layer;
- removing a part of the first mask layer by a first laser irradiation so as to form a first opening;
- removing the insulating layer exposed through the first opening so as to form a second opening through which the semiconductor layer is exposed;
- removing, by an etching agent, the semiconductor layer exposed through the second opening so as to form a third opening;
- removing the first mask layer;
- and
- providing a second mask layer on the semiconductor substrate exposed through the third opening and on the insulating layer.
A method of manufacturing a solar cell comprising:
- providing an insulating layer on a semiconductor layer provided on at least a part of a principle surface of a semiconductor substrate;
- providing a mask layer on the insulating layer and on the surface of the semiconductor substrate;
- removing a part of the mask layer by laser irradiation so as to form a first opening through which the insulating layer is exposed;
- and
- removing the insulating layer exposed through the first opening so as to form a second opening through which the semiconductor layer is exposed, wherein
- the first opening comprises a first irradiated area formed by a first laser irradiation and a second irradiated area formed by a second laser irradiation, which are arranged in line along the principle surface of a semiconductor substrate, and
- a distance between a center of the first irradiated area and a center of the second irradiated area is larger than a radius of the first irradiated area.
Dependencies are inferred from the claim text.