Method of manufacturing solar cell
AssigneeLG Electronics Inc.
InventorsJaewoo Choi, Chungyi Kim
Life of this patent
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Abstract
A method of manufacturing a solar cell is disclosed. The method includes an overlap operation of overlapping front surfaces of two semiconductor substrates each other, a semiconductor layer depositing operation of simultaneously depositing a semiconductor layer on back surfaces of the two semiconductor substrates overlapping each other, a separating operation of separating the two semiconductor substrates overlapping each other, and a front surface texturing operation of texturing the front surfaces of the two semiconductor substrates after an etch stop layer forming operation.
Claims20
A method of manufacturing a solar cell, the method comprising:
- an overlapping operation of overlapping a first surface of a first semiconductor substrate made of a silicon wafer to a first surface of a second semiconductor substrate made of a silicon wafer to form an overlapped semiconductor substrate, wherein the first surface of the first semiconductor substrate and the first surface of the second semiconductor substrate contact each other;
- a semiconductor layer depositing operation of depositing a first semiconductor layer on a second surface of the first semiconductor substrate and a second semiconductor layer on a second surface of the second semiconductor substrate, wherein the second surface of the first semiconductor substrate is positioned at an opposite side of the first surface of the first semiconductor substrate and the second surface of the second semiconductor substrate is positioned at an opposite side of the first surface of the second semiconductor substrate;
- a separating operation of separating the overlapped semiconductor substrate into the first semiconductor substrate and the second semiconductor substrate;
- and
- a texturing operation of texturing the first surface of the first semiconductor substrate.
A method of manufacturing a solar cell, the method comprising:
- an overlapping operation of overlapping a first surface of a first semiconductor substrate to a first surface of a second semiconductor substrate to form an overlapped semiconductor substrate;
- a semiconductor layer depositing operation of depositing a first semiconductor layer on a second surface of the first semiconductor substrate and a second semiconductor layer on a second surface of the second semiconductor substrate;
- a separating operation of separating the overlapped semiconductor substrate into the first semiconductor substrate and the second semiconductor substrate;
- a texturing operation of texturing the first surface of the first semiconductor substrate;
- a thermal processing operation of thermally processing the first semiconductor substrate to form a first conductive region having impurities of a first conductivity type and a second conductive region having impurities of a second conductivity type that is opposite to the first conductivity type;
- and
- an electrode forming operation of forming a first electrode that is coupled to the first conductive region and a second electrode that is coupled to the second conductive region.
Dependencies are inferred from the claim text.