Photovoltaic device and method for manufacturing the same

A photovoltaic device comprising:

• a light absorbing layer, consisting of:
• a plurality of first layers made of a first semiconducting material of GaAs;
• and
• a plurality of second layers made of a second semiconducting material of GaNxAs1-xwherein 0.003≤x≤0.4,
• wherein
• the first layers and second layers are alternately arranged,
• N atoms of the second layers adjacent to each other across an intermediate first layer in a thickness direction of the light absorbing layer are substantially equidistant from one another in the thickness direction,
• each of the plurality of first layers comprises Si atoms in a range from 1017 to 1018 atoms per 1 cm3, and
• the second semiconducting material includes a localized level or an intermediate band in a forbidden band;
• at least two of the second layers are each disposed between a pair of the first layers;
• and a thickness of each of the second layers is thinner than a thickness of four molecular layers of the first semiconducting material.