Metal oxide thin-film transistor and manufacturing method for the same

A metal oxide thin-film transistor, comprising:

• a substrate;
• a source electrode, a barrier layer and a drain electrode which are sequentially formed on the substrate;
• and
• a semiconductor active layer formed on side surfaces of the source electrode and the drain electrode;
• wherein the semiconductor active layer is respectively connected with the source electrode and the drain electrode;
• wherein, in a cross-sectional structure of the metal oxide thin-film transistor, each of the source electrode, the barrier layer and the drain electrode is a trapezoidal structure that a length of an upper surface is less than a length of a lower surface;
• a length of a lower surface of the drain electrode is the same as a length of an upper surface of the barrier layer, a length of a lower surface of the barrier layer is less than a length of an upper surface of the source electrode such that a portion of the source electrode is exposed outside a covering range of the barrier layer;
• and
• wherein the semiconductor active layer is a patterned semiconductor active layer, the patterned semiconductor active layer includes a first patterned semiconductor active layer located at and simultaneously contacted with a left side of the drain electrode and a left side of the source electrode, and a second patterned semiconductor active layer located at and simultaneously contacted with a right side of the drain electrode and a right side of the source electrode.