Thin-film transistor having oxide semiconductor channel layer vertically exending along lateral sides of source electrode, separation layer, and drain electrode and array substrate including same

A thin-film transistor, comprising:

• a flexible backing;
• a moisture/oxygen barrier layer arranged on the flexible backing;
• a buffer layer arranged on the moisture/oxygen barrier layer;
• a source electrode arranged on the buffer layer;
• a separation layer arranged on the source electrode and exposing at least one side portion of the source electrode;
• a drain electrode arranged on the separation layer;
• an oxide semiconductor channel layer arranged at one side of the separation layer and the drain electrode to sequentially contact a portion of an upper surface of the drain electrode, a side surface of the drain electrode and the separation layer, and a portion of an upper surface of the source electrode;
• a gate insulation layer arranged on the oxide semiconductor channel layer;
• and
• a gate electrode arranged on the gate insulation layer,
• wherein the separation layer is arranged to expose two side portions of the source electrode;
• a source contact electrode is arranged on one of the side portions of the source electrode that is distant from the oxide semiconductor channel layer;
• and a drain contact electrode is arranged on one side portion of the drain electrode that is distant from the oxide semiconductor channel layer, the source contact electrode and the drain contact electrode being spaced from each other in a vertical direction in which the source electrode and the drain electrode is separated from each other by the separation layer.