Thin film transistor with carbon nanotubes

A thin film transistor comprising:

• a carbon nanotube structure, the carbon nanotube structure comprises a carbon nanotube, the carbon nanotube comprises a first metallic carbon nanotube segment, a second metallic carbon nanotube segment and one semiconducting carbon nanotube segment between the first metallic carbon nanotube segment and the second metallic carbon nanotube segment, the first metallic carbon nanotube segment, the second metallic carbon nanotube segment and the semiconducting carbon nanotube segment are connected and form an integrated structure, the first metallic carbon nanotube segment is used as a source electrode, the second metallic carbon nanotube segment is used as a drain electrode, the semiconducting carbon nanotube segment is used as a channel, the carbon nanotube structure comprises a plurality of carbon nanotubes, the plurality of carbon nanotubes are combined with each other by Van der Waals force and extend along a same direction, the first metallic carbon nanotube segment and the second metallic carbon nanotube segment have a same length in the plurality of carbon nanotubes, and the semiconducting carbon nanotube segments have a same length in the plurality of carbon nanotubes.