Semiconductor device with gate stack
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChe-Cheng Chang, Chih-Han Lin
Life of this patent
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Abstract
A semiconductor device is provided. The semiconductor device includes a gate stack over a semiconductor substrate. The semiconductor device also includes a protection element over the gate stack, and a top and a bottom of the protection element have different widths. The semiconductor device further includes a spacer over a side surface of the protection element and a sidewall of the gate stack. In addition, the semiconductor device includes a conductive contact electrically connected to a conductive feature over the semiconductor substrate.
Claims20
A semiconductor device, comprising:
- a gate stack over a semiconductor substrate, wherein the gate stack has a work function layer and a metal filling, and tops of the work function layer and the metal filling are at different height levels;
- a protection element over the gate stack, wherein a top and a bottom of the protection element have different widths;
- a spacer over a side surface of the protection element and a sidewall of the gate stack;
- a conductive feature over the semiconductor substrate;
- and
- a conductive contact electrically connected to the conductive feature.
A semiconductor device, comprising:
- a gate stack over a fin structure;
- a protection element over the gate stack, wherein a portion of the gate stack extends into the protection element;
- a spacer over a side surface of the protection element and a sidewall of the gate stack;
- and
- a conductive contact electrically connected to a source/drain feature over the fin structure.
A semiconductor device, comprising:
- a gate stack over a semiconductor substrate;
- a protection element over the gate stack;
- and
- a first spacer and a second spacer located on opposite sides of the gate stack, wherein the first spacer has a first inclined surface, the second spacer has a second inclined surface facing the first inclined surface of the first spacer, and a portion of the gate stack is higher than a bottom of the first inclined surface.
Dependencies are inferred from the claim text.