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US 10,483,393 B2Granted
Method to induce strain in 3-D microfabricated structures
AssigneeSTMicroelectronics S.r.l.
InventorsNicolas Loubet, Pierre Morin
Life of this patent
Estimating the term…
Abstract
Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic relaxation. The structures exhibit a preferred design range for increasing induced strain and uniformity of the strain over the fin height.
Claims21
A device, comprising:
- a substrate having a first portion and a second portion extending away from the first portion, the second portion having a first length in a first direction and a first width in a second direction orthogonal to the first direction;
- a microfabricated structure on the substrate, the microfabricated structure having a fin including:
- the second portion of the substrate;
- a strain-inducing layer on the second portion of the substrate, the strain-inducing layer having a second length in the first direction and a second width in the second direction, the first length approximately equal to the second length and the first width approximately equal to the second width;
- and
- a semiconductor layer on the strain-inducing layer.
3 more elements
A device, comprising:
- a substrate having a first portion with a first surface and a second portion with a second surface spaced apart from the first surface;
- and
- a semiconductor structure extending away from the second surface of the substrate, the semiconductor structure including:
- a strain-inducing layer having a first surface on the second surface of the substrate and a second surface;
- and
- a semiconductor layer having a first surface on the second surface of the strain-inducing layer and a second surface,
- wherein the second portion of the substrate has the same length and width as the strain-inducing layer and the semiconductor layer.
4 more elements
A device, comprising:
- a substrate having a raised portion;
- a fin on the raised portion of the substrate, the fin including:
- a first semiconductor layer on the raised portion of the substrate;
- and
- a second semiconductor layer that is strained on the first semiconductor layer;
- and
- a gate insulator contacting sidewalls of the first semiconductor layer and the second semiconductor layer.
4 more elements
A device, comprising:
- a substrate having a raised portion;
- a dielectric layer over the substrate and surrounding the raised portion;
- a fin on the raised portion of the substrate, the fin including:
- a first semiconductor layer on the raised portion of the substrate, wherein the first semiconductor layer is protruded above the dielectric layer;
- and
- a second semiconductor layer that is strained on the first semiconductor layer;
- and
- a gate structure adjacent to sidewalls of the first semiconductor layer and the second semiconductor layer.
5 more elements
Dependencies are inferred from the claim text.