Semiconductor device and method for manufacturing the same

A semiconductor device comprising:

• a semiconductor substrate having a first surface;
• an insulating isolation film disposed at the first surface;
• and
• a gate electrode,
• the semiconductor substrate having a source region disposed in contact with the first surface, a drain region disposed in contact with the first surface, a drift region disposed in contact with the first surface so as to surround the drain region, and a body region sandwiched between the drift region and the source region and disposed in contact with the first surface so as to surround the source region,
• the source region, the drain region, and the drift region being of a first conductivity type,
• the body region being of a second conductivity type which is opposite to the first conductivity type,
• the insulating isolation film having a first portion disposed inside the drift region in plan view, a second portion protruding from the first portion in a direction toward the source region, and a third portion protruding from the first portion in the direction toward the source region and sandwiching the drift region between the second portion and the third portion,
• the gate electrode facing a portion of the body region sandwiched between the source region and the drift region with being insulated from the portion, and being disposed so as to extend over the second portion and the third portion, wherein
• the semiconductor substrate has a second surface opposite to the first surface,
• the gate electrode has a first embedded portion embedded in the second portion, and a second embedded portion embedded in the third portion,
• the drift region is sandwiched between the first embedded portion and the second embedded portion, and
• the gate electrode has a third embedded portion embedded in the first portion and facing the drift region sandwiched between the second portion and the third portion.