Nitride semiconductor epitaxial substrate and semiconductor device
AssigneesSCIOCS COMPANY LlMITED, Sumitomo Chemical Company, Limited
InventorTakeshi Tanaka
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Abstract
There is provided a nitride semiconductor epitaxial substrate, including: a substrate; a first nitride semiconductor layer formed on the substrate, as an electron transit layer in which two-dimensional electron gas exists; and a second nitride semiconductor layer formed on the first nitride semiconductor layer, as an electron supply layer, wherein the second nitride semiconductor layer includes a portion in which a hydrogen concentration is higher than that of the first nitride semiconductor layer and a difference of the hydrogen concentration from that of the first nitride semiconductor layer is 2×1018 cm−3 or less.
Claims6
A nitride semiconductor epitaxial substrate, comprising:
- a substrate;
- a first nitride semiconductor layer formed on the substrate, as an electron transit layer in which two-dimensional electron gas exists;
- and
- a second nitride semiconductor layer formed on the first nitride semiconductor layer, as an electron supply layer,
- wherein in the whole second nitride semiconductor layer, a hydrogen concentration is higher than a hydrogen concentration of the first nitride semiconductor layer and a difference of the hydrogen concentration of the second nitride semiconductor layer from the hydrogen concentration of the first nitride semiconductor layer is 2×1018 cm−3 or less.
Dependencies are inferred from the claim text.