Semiconductor device and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorAryan Afzalian
Life of this patent
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Abstract
A semiconductor device includes a source region having a first dopant and a drain region having a second dopant. The first dopant is different from the second dopant. A channel region is in between the source and drain region. The channel region is intrinsic. A tunnel barrier layer disposed in between the drain region and the channel region. A gate stack disposed on the channel region. The source region comprises GaSb, the drain region comprises InAs, the channel region comprises InAs, and the tunnel barrier layer comprises InGaAs. The gate stack wraps around the channel region and partially overlaps the tunnel barrier layer.
Claims20
A semiconductor device, comprising:
- a source region having a first dopant;
- a drain region having a second dopant, the first dopant being different from the second dopant;
- a channel region between the source region and drain region, wherein the channel region is intrinsic;
- a tunnel barrier layer between the drain region and the channel region, wherein a material of the tunnel barrier layer having a larger bandgap than the channel region;
- and
- a gate stack disposed on the channel region.
A method of fabricating a semiconductor device, the method comprising:
- forming a channel region on a semiconductor substrate, wherein the channel region is intrinsic;
- forming a tunnel barrier layer next to the channel region;
- forming source and drain regions on the semiconductor substrate, wherein the tunnel barrier layer is between the channel region and drain region and is spaced from the source region, a material of the tunnel barrier layer has a larger bandgap than the channel region;
- and
- forming a gate stack on the channel region.
A semiconductor device, comprising:
- a source region having a first dopant;
- a drain region having a second dopant, the first dopant being different from the second dopant;
- a channel region between the source region and drain region, wherein the channel region is intrinsic;
- a tunnel barrier layer between the drain region and the channel region, wherein a material of the tunnel barrier layer having a larger bandgap than the channel region;
- and
- a gate stack disposed on the channel region;
- wherein the drain region is disposed over the tunnel barrier layer which is disposed over the channel region, and the channel region is disposed on the source region.
Dependencies are inferred from the claim text.