Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorSun-Ki Min
Life of this patent
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Abstract
A semiconductor device including a first insulating interlayer on a substrate; a second insulating interlayer on the first insulating interlayer; a gate structure extending through the first insulating interlayer and the second insulating interlayer on the substrate, a lower portion of the gate structure having a first width, and an upper portion of the gate structure having a second width that is greater than the first width and that gradually increases from a bottom toward a top thereof; and a spacer structure on a sidewall of the gate structure, a width of an upper portion of the spacer structure being less than a width of a lower portion of the spacer structure.
Claims20
A semiconductor device, comprising:
- a first insulating interlayer on a substrate;
- a second insulating interlayer on the first insulating interlayer;
- a gate structure extending through the first insulating interlayer and the second insulating interlayer on the substrate, a lower portion of the gate structure having a constant first width, and an upper portion of the gate structure having a second width that is greater than the first width and that gradually increases from a bottom toward a top thereof;
- and
- a spacer structure on a sidewall of the gate structure, a width of an upper portion of the spacer structure being less than a width of a lower portion of the spacer structure.
A semiconductor device, comprising:
- a first insulating interlayer on a substrate, the substrate including first and second regions;
- a second insulating interlayer on the first insulating interlayer;
- first gate structures extending through the first insulating interlayer and the second insulating interlayer on the first region of the substrate, a lower portion of each of the first gate structures having a first width, and an upper portion of each of the first gate structures having a second width that is greater than the first width and that gradually increases from a bottom toward a top thereof;
- a first spacer structure on a sidewall of each of the first gate structures;
- second gate structures extending through the first insulating interlayer and the second insulating interlayer on the second region of the substrate, a lower portion of each of the second gate structures having a third width, and an upper portion of each of the second gate structures having a fourth width that is greater than the third width and that gradually increases from a bottom toward a top thereof;
- and
- a second spacer structure on a sidewall of each of the second gate structures, an upper end of the second spacer structure having a height that is different from a height of an upper end of the first spacer structure,
- wherein a first distance between the first gate structures is less than a second distance between the second gate structures.
A semiconductor device, comprising:
- a first insulating interlayer on a substrate;
- a second insulating interlayer on the first insulating interlayer;
- a gate structure extending through the first insulating interlayer and the second insulating interlayer on the substrate, a lower portion of the gate structure having a first width, and an upper portion of the gate structure having a second width that is greater than the first width and that gradually increases from a bottom toward a top thereof;
- and
- a spacer structure on a sidewall of the gate structure,
- wherein an upper portion of the spacer structure has an oxygen concentration that is different from an oxygen concentration of a lower portion of the spacer structure.
Dependencies are inferred from the claim text.