Semiconductor structure and fabrication method thereof
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
InventorHao Deng
Life of this patent
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Abstract
A semiconductor structure and a fabrication method are provided. The fabrication method includes: providing a substrate; forming a gate dielectric layer on the substrate; forming a dielectric barrier layer structure on the gate dielectric layer, a first silicon source gas being used to dope silicon in the dielectric barrier layer structure; forming a work function layer on the dielectric barrier layer structure; forming a gate barrier layer structure on the work function layer, a second silicon source gas being used to dope silicon in the gate barrier layer structure; and forming a gate electrode layer on the gate barrier layer structure.
Claims18
A method of forming a semiconductor structure, comprising:
- providing a substrate;
- forming a gate dielectric layer on the substrate;
- forming a dielectric barrier layer structure on the gate dielectric layer, wherein a first silicon source gas is used to dope silicon in the dielectric barrier layer structure;
- forming a work function layer on the dielectric barrier layer structure;
- forming a gate barrier layer structure on the work function layer, wherein a second silicon source gas is used to dope silicon in the gate barrier layer structure, wherein the dielectric barrier layer structure has a stacked structure and an average atomic percentage concentration of silicon in the dielectric barrier layer structure is smaller than an average atomic percentage concentration of silicon in a layer of the stacked structure adjacent to the work function layer;
- and
- forming a gate electrode layer on the gate barrier layer structure.
Dependencies are inferred from the claim text.